HMC396-DIE InGaP HBT Gain Block Amplifier Chip, DC - 8 GHz
The HMC396 die is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC DC to 8 GHz amplifier. This amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +16 dBm output power. The HMC396 offers 12 dB of gain and an output IP3 of +30 dBm while requiring only 56 mA from a +5V supply.
The Darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components. The HMC396 can easily be integrated into Multi-Chip-Modules (MCMs) due to its small (0.22mm²) size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.5mm (20 mils).
Applications
- Microwave & VSAT Radios
- Test Equipment
- Military EW, ECM, C³I
- Space Telecom
Features and BenefitsGain: 12 dBP1dB Output Power: +14 dBmStable Gain Over Temperature50 Ohm I/O’sSmall Size: 0.38 x 0.58 x 0.1 mm | S-Parameters |
Data Sheets
Application Notes
Order Information
| Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
|---|
| HMC396 Production | CHIPS OR DIE | OTH 50 | -55 to 85C | 14.7 | 12.02 | Y |
| HMC396-SX Production | CHIPS OR DIE | OTH 2 | -55 to 85C | 0 | 0 | Y |
Reference Materials
