HMC414 InGaP HBT Power Amplifier SMT, 2.2 - 2.8 GHz
The HMC414MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 2.2 and 2.8 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +30 dBm of saturated power at 32% PAE from a +5V supply voltage. The amplifier can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/ current control.
Applications
Features and BenefitsGain: 20 dBSaturated Power: +30 dBm32% PAESupply Voltage: +2.75V to +5VPower Down CapabilityLow External Part Count | S-Parameters |
Data Sheets
Application Notes
Order Information
| Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
|---|
| HMC414MS8GE Production | 8 ld MSOP_EP | OTH 50 | -40 to 85C | 6.2 | 5.02 | Y |
| HMC414MS8GETR Production | 8 ld MSOP_EP | REEL 500 | -40 to 85C | 6.2 | 5.02 | Y |
Evaluation Boards
| Part Number | Description | Price | RoHS |
|---|
| 105006-HMC414MS8G | Evaluation Board - HMC414MS8G Evaluation PCB | 347.13 | Y |
Reference Materials
