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The HMC635 is a GaAs PHEMT MMIC Driver Amplifier die which operates between 18 and 40 GHz. The amplifier provides 19.5 dB of gain, +29 dBm Output IP3, and +23 dBm of output power at 1 dB gain compression, while requiring 280 mA from a +5V supply. Ideal as a driver amplifier for microwave radio applications, or as an LO driver for mixers operating between 18 and 40 GHz, the HMC635 is capable of providing up to +24 dBm of saturated output power at 15% PAE. The amplifier’s I/Os are DC blocked and internally matched to 50 Ohms making it ideal for integration into Multi-Chip-Modules (MCMs). All data is taken with die connected at input and output RF ports via two 1 mil wedge bonds of 500μm length.
Applications
Features and Benefits+24 dBm @ 15% PAE | RF & MicrowaveS-Parameters |
| Document | note |
| HMC635 Die Data Sheet | PDF 645.42 K |
| Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
|---|---|---|---|---|---|---|
| HMC635 Production | CHIPS OR DIE | OTH 25 | -55 to 85C | 93.54 | 75.76 | Y |
| HMC635-SX Production | CHIPS OR DIE | OTH 2 | -55 to 85C | 0 | 0 | Y |