HMC659-Die Power Amplifier Chip, DC - 15 GHz
The HMC659 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 15 GHz. The amplifier provides 19.1 dB of gain, +35 dBm output IP3 and +26.5 dBm of output power at 1 dB gain compression while requiring 300 mA from a +8V supply. Gain flatness is excellent at ±0.4 dB from DC to 10 GHz making the HMC619 ideal for EW, ECM, Radar and test equipment applications. The HMC619 amplifier I/Os are internally matched to 50 ohms facilitating integration into Mutli-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).
Applications
- Telecom Infrastructure
- Microwave Radio & VSAT
- Military & Space
- Test Instrumentation
- Fiber Optics
Features and BenefitsP1dB Output Power: +26.5 dBmGain: 19.1 dBOutput IP3: +35 dBmSupply Voltage: +8V @ 300 mA50 Ohm Matched Input/OutputDie Size: 3.115 x 1.630 x 0.1 mm | |
Data Sheets
Application Notes
Order Information
| Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
|---|
| HMC659 Production | CHIPS OR DIE | OTH 10 | -55 to 85C | 160.96 | 131.7 | Y |
| HMC659-SX Production | CHIPS OR DIE | OTH 2 | -40 to 85C | 0 | 0 | Y |
Reference Materials
