MAT01 Matched Monolithic Dual Transistor
The MAT01 is a monolithic dual NPN transistor. An exclusive Silicon Nitride "Triple-Passivation" process provides excellent stability of critical parameters over both temperature and time. Matching
characteristics include offset voltage of 40µV, temperature drift of 0.15µV/°C, and hFE matching of 0.7%.
Very high h is provided over a six decade range of collector current, including an exceptional hFE of 590 at a collector current of only 10nA. The high gain at lower collector current makes the MAT01 ideal for use in low-power, low-level input stages.
Features and Benefits- Low VOS (VBE match): 40 μV typical, 100 μV maximum
- Low TCVOS: 0.5 μV/°C maximum
- High hFE: 500 minimum
- Excellent hFE linearity from 10 nA to 10 mA
- Low noise voltage:
0.23 μV p-p from 0.1 Hz to 10 Hz - High breakdown: 45 V min
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Data Sheets
Application Notes
Order Information
| Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
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| MAT01AH Production | ROUND HEADER/METAL CAN | OTH 100 | -55 to 125C | 17.47 | 16.62 | N |
| MAT01AHZ Production | ROUND HEADER/METAL CAN | OTH 100 | -55 to 125C | 15.21 | 14.48 | Y |
| MAT01GH Production | ROUND HEADER/METAL CAN | OTH 100 | -55 to 125C | 10.59 | 10.19 | N |
| MAT01GHZ Production | ROUND HEADER/METAL CAN | OTH 100 | -55 to 125C | 9.75 | 9.28 | Y |
