DMN1019UFDE：N Channel 8V to 29V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | PD @TA = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | RDS(ON)Max @ VGS(1.8V) (mΩ) | VGS(th) Min.(V) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 4.5V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMN1019UFDE | DMN1019UFDE.pdf | DMN1019UFDE | Yes | Yes | N | Yes | 12 | 8 | 11 | 0.69 | - | 10 | 12 | 14 | 0.35 | 0.8 | 2480 | - | - | 27.3 |
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Application
- Load Switching
- Battery Management Application
- Power Management Functions
Ordering Information
- DMN1019UFDE-7
U-DFN2020-6 (Type E)
- DMN1019UFDE.pdf DMN1019UFDE
