DMN1032UCB4：N Channel 8V to 29V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | PD @TA = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | RDS(ON)Max @ VGS(1.8V) (mΩ) | VGS(th) Min.(V) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 4.5V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMN1032UCB4 | DMN1032UCB4.pdf | DMN1032UCB4 | Yes | No | N | No | 12 | 8 | 4.8 | 1.16 | - | 26 | 29 | 38 | 0.4 | 1.2 | 325 | - | - | 3.2 |
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Application
- Battery Management
- Load Switch
- Battery Protection
Ordering Information
- DMN1032UCB4-7
U-WLB1010-4
- DMN1032UCB4.pdf DMN1032UCB4
- DMP1096UCB4 p-channel enhancement mode mosfet DMP1096UCB4
