DMN1054UCB4：N Channel 8V to 29V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | PD @TA = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | RDS(ON)Max @ VGS(1.8V) (mΩ) | VGS(th) Min.(V) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 4.5V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMN1054UCB4 | DMN1054UCB4.pdf | DMN1054UCB4 | No | No | N | No | 8 | 5 | 4 | 1.34 | - | - | 50 | - | - | - | 590 | 6 | - | - |
Description
This 3rd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(on) per footprint area.
Application
- DC-DC Converters
- Battery Management
- Load Switch
Features
- LD-MOS Technology with the Lowest Figure of Merit:
RDS(on) = 37mΩ to Minimize On-State Losses
Qg = 7.5nC for Ultra-Fast Switching - Vgs(th) = 0.6V typ. for a Low Turn-On Potential
- CSP with Footprint 0.8mm × 0.8mm
- Height = 0.35mm for Low Profile
Ordering Information
- DMN1054UCB4-7
X1-WLB0808-4
- DMN1054UCB4.pdf DMN1054UCB4
