DMN10H170SFG:N Channel ≥100V

Part NumberData SheetSPICE ModelQualified to AECQ10xPPAP CapablePolarityESD Diodes (Y/N)VDS (V)VGS (±V)IDS @TA = +25°C (A)IDS @TC = +25°C (A)PD @TA = +25°C (W)PD @TC = +25°C (W)RDS(ON)Max @ VGS(10V) (mΩ)RDS(ON)Max @ VGS(4.5V) (mΩ)RDS(ON)Max @ VGS(2.5V) (mΩ)VGS (th) Max (V)CISS Typ (pF)CISS Condition [@VDS] (V)QG Typ@ VGS = 10V(nC)QG Typ @ VGS = 4.5V(nC)
DMN10H170SFGDMN10H170SFG.pdf-YesYesNNo100203.7-0.94-122--30014.9-
Description

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application
  • Backlighting
  • Power Management Functions
  • DC-DC Converters
Ordering Information
  • DMN10H170SFG-13
  • DMN10H170SFG-7
PowerDI3333-8
DMN10H170SFG.pdf DMN10H170SFG