DMN2014LHAB:N Channel 8V to 29V

Part NumberData SheetSPICE ModelQualified to AECQ10xPPAP CapablePolarityESD Diodes (Y/N)VDS (V)VGS (±V)IDS @TA = +25°C (A)PD @TA = +25°C (W)RDS(ON)Max @ VGS(10V) (mΩ)RDS(ON)Max @ VGS(4.5V) (mΩ)RDS(ON)Max @ VGS(2.5V) (mΩ)RDS(ON)Max @ VGS(1.8V) (mΩ)VGS(th) Min.(V)VGS (th) Max (V)CISS Typ (pF)CISS Condition [@VDS] (V)QG Typ@ VGS = 10V(nC)QG Typ @ VGS = 4.5V(nC)
DMN2014LHABDMN2014LHAB.pdf-YesYesN+NYes201290.8-1318280.31.11550-3716
Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application
  • Power Management Functions
  • Battery Pack
  • Load Switch
Ordering Information
  • DMN2014LHAB-7
U-DFN2030-6 (Type B)
DMN2014LHAB.pdf DMN2014LHAB