DMN2014LHAB:N Channel 8V to 29V
Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | PD @TA = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | RDS(ON)Max @ VGS(1.8V) (mΩ) | VGS(th) Min.(V) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 4.5V(nC) |
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DMN2014LHAB | DMN2014LHAB.pdf | - | Yes | Yes | N+N | Yes | 20 | 12 | 9 | 0.8 | - | 13 | 18 | 28 | 0.3 | 1.1 | 1550 | - | 37 | 16 |
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Application
- Power Management Functions
- Battery Pack
- Load Switch
Ordering Information
U-DFN2030-6 (Type B)
![U-DFN2030-6 (Type B)](/image/diodes/U-DFN2030-6 (Type B).jpg)