DMNH10H028SK3Q：N Channel ≥100V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | IDS @TC = +25°C (A) | PD @TA = +25°C (W) | PD @TC = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 4.5V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMNH10H028SK3Q | DMNH10H028SK3Q.pdf | DMNH10H028SK3Q | Yes | Yes | N | No | 100 | 20 | - | 55 | - | 125 | 28 | - | - | 4 | 2245 | 50 | 31.9 | 8.1 |
Description
This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.
Application
- DC-DC Converters
- Automaotive
- Industrial
Features
- Thermally Efficient Package – Cooler Running Applications
- High Conversion Efficiency
- Low RDS(ON) – Minimizes On-State Losses
- Low Input Capacitance
- Fast Switching Speed
Ordering Information
- DMNH10H028SK3Q-13
TO252 (DPAK)
- DMNH10H028SK3Q.pdf DMNH10H028SK3Q
