DMP1081UCB4：P Channel 8V to 29V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | PD @TA = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | RDS(ON)Max @ VGS(1.8V) (mΩ) | VGS(th) Min.(V) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 4.5V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMP1081UCB4 | DMP1081UCB4.pdf | DMP1081UCB4 | Yes | No | P | Yes | 12 | 6 | 3.3 | 1.59 | - | 80 | 100 | - | - | 0.65 | 213 | 6 | - | 213 |
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance,making it ideal for high efficiency power management applications.
Application
- Battery Management
- Load Switch
- Battery Protection
Features
- Trench-MOS Technology with the Lowest On-Resistance:
- RDS(ON) = 0.065Ω to Minimize On-State Losses
- QG = 2.5nC for Ultra-Fast Switching
- VGS(TH) = -0.5V Typ. for a Low Turn-On Potential
- CSP with Footprint 1.0mm × 1.0mm
- Height = 0.62mm for Low Profile
- ESD = 3kV HBM Protection of Gate
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
- Qualified to AEC-Q101 Standards for High Reliability
Ordering Information
- DMP1081UCB4-7
U-WLB1010-4
- DMP1081UCB4.pdf DMP1081UCB4
- DMP1096UCB4 p-channel enhancement mode mosfet DMP1096UCB4
