DMP3017SFGQ：P Channel 30V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | PD @TA = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ @ VGS = 4.5V(nC) | QG Typ@ VGS = 10V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMP3017SFGQ | DMP3017SFGQ.pdf | DMP3017SFGQ | Yes | Yes | P | Yes | 30 | 25 | 11.5 | 2.2 | 10 | 18 | - | 3 | 2246 | 15 | - | 41 |
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Application
- Backlighting
- Power Management Functions
- DC-DC Converters
- Automotive
- Communications
Features
- Low RDS(ON) – ensures on state losses are minimized
- Small form factor thermally efficient package enables higher density end products
- Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
- ESD Protected Gate
Ordering Information
- DMP3017SFGQ-7
PowerDI3333-8
- DMP3017SFGQ.pdf DMP3017SFGQ
