DMT10H010LPS：N Channel ≥100V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | IDS @TC = +25°C (A) | PD @TA = +25°C (W) | PD @TC = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 4.5V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMT10H010LPS | DMT10H010LPS.pdf | DMT10H010LPS | Yes | No | N | No | 100 | 20 | 9.4 | 98 | 1.2 | 139 | 8.3 | 20 | - | 3 | 2592 | 50 | 53.7 | - |
Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Application
- Power Management function
- AC-DC secondary Rectifier
- LED Boost
- Chargers
- Power Supplies
- Notebooks
- Adapters
- Communications
Features
- Low On-Resistance
- Fast Switching Speed
- Low Threshold
- Low Gate Drive
- Low Input Capacitance
Ordering Information
- DMT10H010LPS-13
PowerDI5060-8
- DMT10H010LPS.pdf DMT10H010LPS
