Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | VIN & VCC Max (V) | ISOURCE@ IIN = 10mA (A) | ISINK @IIN = -10mA (A) | IPK Max (A) | IIN Max (A) | SwitchingTimes Typ (td (rise)) (ns) | SwitchingTimes Typ (tr) (ns) | SwitchingTimes Typ (td (fall)) (ns) | SwitchingTimes Typ (tf) (ns) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ZXGD3005E6 | ZXGD3005E6.pdf | ZXGD3005E6 | Yes | No | 25 | 4 @ IIN = 1mA | 3.8 @ IIN = -1mA | 10 | 0.1 | 9.5 | 14.5 | 6 | 14 |
The ZXGD3005E6 is a high-speed non-inverting single gate driver capable of driving up to 10A into a MOSFET or IGBT gate capacitive load from supply voltages up to 25V. With propagation delay times down to <10ns and correspondingly rise/fall times of <20ns. This gate driver ensures rapid switching of the MOSFET or IGBT to minimize power losses and distortion in high current switching applications. It is ideally suited to act as a voltage buffer between the typically high output impedances of a controller IC and the effectively low impedance on the gate of a power MOSFET or IGBT during switching. Its low input voltage requirement and high current gain allows high current driving from low voltage controller ICs. The ZXGD3005E6 has separate source and sink outputs that enables the turn-on and turn-off times of the MOSFET or IGBT to be independently control°C. In addition, the wide supply voltage range allows full enhancement of the MOSFET or IGBT to minimize on-state losses and permits +15V to -5V gate drive voltage to prevent dV/dt induced false triggering of IGBTs. The ZXGD3005E6 has been designed to be inherently rugged to latch-up and shoot-through issues. The optimized pin-out SOT26 package eases board layout, enabling reduced parasitic inductance of traces.