ZXMN10A08E6：N Channel ≥100V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | IDS @TC = +25°C (A) | PD @TA = +25°C (W) | PD @TC = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 4.5V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ZXMN10A08E6 | ZXMN10A08E6.pdf | ZXMN10A08E6 | Yes | Yes | N | No | 100 | 20 | 1.9 | - | 1.7 | - | 250 | 300 | - | 4 | - | - | 7.7 | - |
Description
This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speeds, this makes it ideal for high efficiency power management applications.
Application
- DC-DC Converters
- Power management functions
- Disconnect Switches
- Motor control
Ordering Information
- ZXMN10A08E6TA
SOT26
- ZXMN10A08E6.pdf ZXMN10A08E6
- ZXTP2006E6 ZXTP2006E6
- ZXTP2006E6 ZXTP2006E6
