ZXMS6005DT8：IntelliFET
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Configuration | Polarity | TAB | BVDSS (V) | ID VIN = 5V (A) | PD (W) | RDS(ON) Max @ VIN (3V) (mΩ) | RDS(ON) Max @VIN (5V) (mΩ) | RDS(ON) Max @ VIN (10V) (mΩ) | VDS VIN = 5V (S/C) (%) | EAS (mJ) | TJ (°C) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ZXMS6005DT8 | ds32248.pdf | - | Yes | Yes | Dual | N | - | 60 | 1.8 | 2.13 | 250 | 200 | - | 24 | 210 | 150 |
Description
The ZXMS6005DT8 is a dual self protected low side MOSFET with logic level input. It integrates over-temperature, overcurrent, over-voltage (active clamp) and ESD protected logic level functionality independently per channel. The ZXMS6005DT8 is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough.
Application
- Two completely isolated independent channels
- Especially suited for loads with a high in-rush current such as lamps and motors.
- All types of resistive, inductive and capacitive loads in switching applications.
- ?C compatible power switch for 12V DC applications.
- Automotive rated.
- Replaces electromechanical relays and discrete circuits.
- Linear Mode capability - the current-limiting protection circuitry is designed to de-activate at low VDS to minimise on state power dissipation. The maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the product’s ability to selfprotect at low VDS.
Ordering Information
- ZXMS6005DT8TA
SM-8
