FDB8030L: 30V N-Channel Logic Level PowerTrench® MOSFET

This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETS feature faster switching and lower gate charge than other MOSFETS with comparable RDS(on) specifications.

The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Features

• 80A, 30 V
  
  • RDS(ON) = 0.0035 Ω@ VGS =10 V
  • RDS(ON) = 0.0045 Ω @ VGS = 4.5 V
• R_DS(ON) = 0.0035 Ω@ V_GS =10 V
  
• R_DS(ON) = 0.0045 Ω @ V_GS = 4.5 V
  
• Critical DC electrical parameters specified at elevatedtemperature
  
• Rugged internal source-drain diode can eliminate the needfor an external Zener diode transient suppressor
  
• High performance trench technology for extremely lowR_DS(ON)
  
• 175°C maximum junction temperature rating
  

Application Notes