FDFME3N311ZT: 30V Integrated N-Channel PowerTrench® MOSFET and Schottky Diode

This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and on-state resistance. An independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency.

The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.

Features

• Max r_DS(on) = 299 mΩ at V_GS = 4.5 V, I_D = 1.6 A
  
• Max r_DS(on) = 410 mΩ at V_GS = 2.5 V, I_D = 1.3 A
  
• Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
  
• Free from halogenated compounds and antimony oxides
  
• HBM ESD protection level > 1600V (Note3)
  
• RoHS Compliant
  

Application Notes