FDG311N: N-Channel 2.5V Specified PowerTrench ® MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.

Features

• 1.9 A, 20 V. R_DS(ON) = 0.115 Ω @ V_GS = 4.5 V, R_DS(ON) = 0.150 Ω @ V_GS = 2.5 V.
• Low gate charge (3nC typical).
• High performance trench technology for extremely lowR_DS(ON).
• Compact industry standard SC70-6 surface mountpackage.

Application Notes