FDMA3028N: 30V Dual N-Channel PowerTrench® MOSFET

This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

Features

• Max r_DS(on) = 68 mΩ at V_GS = 4.5 V, I_D = 3.8 A
• Max r_DS(on) = 88 mΩ at V_GS = 2.5 V, I_D = 3.4 A
• Max r_DS(on) = 123 mΩ at V_GS = 1.8 V, I_D = 2.9 A
• Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm
• RoHS Compliant

Application Notes