FDME1024NZT: 20V Dual N-Channel Power Trench® MOSFET

This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses.                                                                       The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.

Features

• Max r_DS(on) = 66 mΩ at V_GS = 4.5 V, I_D = 3.4 A
  
• Max r_DS(on) = 86 mΩ at V_GS = 2.5 V, I_D = 2.9 A
  
• Max r_DS(on) = 113 mΩ at V_GS = 1.8 V, I_D = 2.5 A
  
• Max r_DS(on) = 160 mΩ at V_GS = 1.5 V, I_D = 2.1 A
  
• Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
  
• Free from halogenated compounds and antimony oxides
  
• HBM ESD protection level > 1600V (Note3)<strong></strong>
  
• RoHS Compliant
  

Application Notes