FDMS3006SDC: 30V N-Channel Dual Cool™ Power Trench® SyncFET™

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.

Features

• Dual Cool™ Top Side Cooling PQFN package
  
• Max r_DS(on) = 1.9 mΩ at V_GS = 10 V, I_D = 30 A
  
• Max r_DS(on) = 2.7 mΩ at V_GS = 4.5 V, I_D = 26 A
  
• High performance technology for extremely low r_DS(on)
  
• SyncFET Schottky Body Diode
  
• RoHS Compliant
  

Application Notes