FDS6673BZ: -30V P-Channel PowerTrench® MOSFET

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance.

This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Features

• Max r_DS(on) = 7.8mΩ, V_GS = -10V, I_D = -14.5A
  
• Max r_DS(on) = 12mΩ, V_GS = -4.5V, I_D = -12A
  
• Extended V_GS range (-25V) for battery applications
  
• HBM ESD protection level of 6.5kV typical (note 3)
  
• High performance trench technology for extremely low r_DS(on)
  
• High power and current handling capability
  
• RoHS compliant
  

Application Notes