FDZ1905PZ: -20V Common Drain P-Channel 1.5V PowerTrench® WL-CSP MOSFET

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two common drain P-channel MOSFETs, which enables bidirectional current flow, on Fairchild's advanced 1.5V PowerTrench® process with state of the art ¡°low pitch¡± WL-CSP packaging process, the FDZ1905PZ minimizes both PCB space and rS1S2(on). This advanced WL-CSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rS1S2(on).

Features

• Max r_S1S2(on) = 126mΩ at V_GS = -4.5V, I_S1S2 = -1A
  
• Max r_S1S2(on) = 141mΩ at V_GS = -2.5V, I_S1S2 = -1A
  
• Max r_S1S2(on) = 198mΩ at V_GS = -1.8V, I_S1S2 = -1A
  
• Max r_S1S2(on) = 303mΩ at V_GS = -1.5V, I_S1S2 = -1A
  
• Occupies only 1.5 mm² of PCB area, less than 50% of the area of 2 x 2 BGA
  
• Ultra-thin package: less than 0.65 mm height when mounted to PCB
  
• High power and current handling capability
  
• HBM ESD protection level > 4kV (Note 3)
  
• RoHS compliant
  

Application Notes