FQB25N33TM_F085: 330V N-Channel QFET® MOSFET
These N-Channel enhancement mode power field effect transistors are produced using Farichild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimized on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
Features
- 25A, 330V, RDS(on) = 0.23Ω @VGS = 10V
- Low gate charge (typical 58nC)
- Low Crss (typical 40pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Qualified to AEC Q101
- RoHS Compliant
Ordering Code| Product | Product & Eco Status | Unit Price/1K Order | Packing Method Convention | Package Marking Convention* |
|---|
| FQB25N33TM_F085 | Full Production
ROHS Compliant as of 27-Feb-2006
China RoHS | $1.5327 | TO-263 2L (D2PAK)
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4.445 x 10.16 x 15.24mm,
TAPE REEL | Line 1$Y (Fairchild logo)
&Z (Plant Code)
&3 (3-Digit Date Code)
&K
Line 2FQB
Line 325N33
|
