FQP11P06: P-Channel QFET® MOSFET -60V, -11.4A, 175 mΩ
These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for lowvoltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
Features
- -11.4 A, -60 V, RDS(on) = 175 mΩ (Max.) @ VGS = -10 V, ID = -5.7 A
- Low Gate Charge (Typ. 13 nC)
- Low Crss (Typ. 45 pF)
- 100% Avalanche Tested
- 175oC Maximum Junction Temperature Rating
Ordering Code| Product | Product & Eco Status | Unit Price/1K Order | Packing Method Convention | Package Marking Convention* |
|---|
| FQP11P06 | Full Production
ROHS Compliant as of 27-Feb-2006
China RoHS | $0.5994 | TO-220 3L
-
4.83 x 10.16 x 8.89mm,
RAIL | Line 1$Y (Fairchild logo)
&Z (Plant Code)
&3 (3-Digit Date Code)
&K
Line 2FQP
Line 311P06
|
Application Notes
AN-4163 Shielded Gate PowerTrench® MOSFET Datasheet Explanation Last Update : 23-Oct-2014AN-9034 Power MOSFET Avalanche Guideline Last Update : 05-Mar-2011AN-7510 A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options Last Update : 05-Mar-2011AN-9010 MOSFET Basics Last Update : 09-Sep-2013AN-9065 FRFET® in Synchronous Rectification Last Update : 28-Jun-2014AN-7515 A Combined Single-Pulse and Repetitive UIS Rating System Last Update : 03-Mar-2011AN-7533 A Revised MOSFET Model With Dynamic Temperature Compensation Last Update : 05-Mar-2011AN-558 Introduction to Power MOSFETs and their Applications Last Update : 29-Mar-2016AN-9005 Driving and Layout Design for Fast Switching Super-Junction MOSFETs Last Update : 26-Nov-2014
