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Home > Fairchild Semiconductor > IGBT > HGTG30N60A4

HGTG30N60A4: 600V, SMPS IGBT

The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.

HGTG30N60A4 Datasheet
Features
  • 60A, 600V @ TC = 110°C
  • Low Saturation Voltage : V CE(sat) = 1.8 V @ I C = 30A
  • Typical Fall Time. . . . . . . . . . 58ns at TJ = 125°C
  • Low Conduction Loss
Ordering Code
ProductProduct & Eco StatusUnit Price/1K OrderPacking Method ConventionPackage Marking Convention*
HGTG30N60A4Full Production ROHS Compliant as of 27-Feb-2006  China RoHS$6.39TO-247 3L  -  4.7 x 15.62 x 20.57mm,  RAIL
  • TO-247 3L  Drawing Last Update: Sep 2016
  • TO247-3L, JEDEC OPTION AB, PACKING DRAWING Last Update: Nov 2015
Line 1$Y (Fairchild logo)
&Z (Plant Code)
&3 (3-Digit Date Code)
&K

Line 2G30N60A4

Application Notes
  • AN-6004 500W Power-Factor-Corrected (PFC) Converter Design with FAN4810 Last Update : 05-Mar-2011
  • HGTG30N60A4.pdf
    TO-247 3L  Drawing Last Update: Sep 2016
    TO247-3L, JEDEC OPTION AB, PACKING DRAWING Last Update: Nov 2015
    500W Power-Factor-Corrected (PFC) Converter Design with FAN4810 Last Update : 05-Mar-2011
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