NDT2955: P-Channel Enhancement Mode Field Effect Transistor

This 60V P-Channel MOSFET is produced using Fairchild Semiconductor’s high voltage Trench process. It has been optimized for power management plications.

Features

• -2.5A, -60V
• R_DS(ON) = 300mΩ @ V_GS = -10V
• R_DS(ON) = 500mΩ @ V_GS = -4.5V
• High density cell design for extremely low R_DS(ON)
• High power and current handling capability in a widelyused surface mount package.

Application Notes