IPD30N06S2-23

ParametricIPD30N06S2-23
RDS (on) (@10V)  max23.0mΩ
RDS (on)  max23.0mΩ
QG25.0nC
VDS  max55.0V
ID  max30.0A
RthJC  max1.5K/W
Ptot  max100.0W
IDpuls  max120.0A
VGS(th)  min  max2.1V  4.0V
Sales Product NameIPD30N06S2-23
OPNIPD30N06S223ATMA2
Product Statusactive and preferred
Package NamePG-TO252-3
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size2500
Packing TypeTAPE & REEL
Summary of Features:
  • • N-channel - Enhancement mode
  • • Automotive AEC Q101 qualified
  • • MSL1 up to 260°C peak reflow
  • • 175°C operating temperature
  • • Green package (lead free)
  • • Ultra low Rds(on)
  • • 100% Avalanche tested
Benefits:
  • world's lowest RDS at 55V (on)  in planar technology
  • highest current capability
  • lowest switching and conduction power losses for highest thermal efficiency
  • robust packages with superior quality and reliability
  • Optimized total gate charge enables smaller driver output stages
Target Applications:
  • Valves control
  • Solenoids control
  • Lighting
  • Single-ended motors
Data Sheet
TitleSizeDateVersion
IPD30N06S2-23 Data Sheet,EN150 KB12 Jul 201201_00
Product Brochure
TitleSizeDateVersion
Automotive MOSFETs Product BrochureEN3.5 MB26 May 201501_00
Application Notes
TitleSizeDateVersion
Repetitive Avalanche of Automotive MOSFETs3.7 MB03 Mar 201401_00
Application Brochure
TitleSizeDateVersion
Application Brochure - Infineon Solutions for TransportationEN6.9 MB01 Jun 201300_00
Product Selection Guide
TitleSizeDateVersion
Automotive Power Selection GuideEN10.6 MB19 Jan 201601_01
Simulation Models
TitleSizeDateVersion
PSpice-OptimOS175 KB11 Jun 201201_00
Package Data
TitleSizeDateVersion
PG-TO252-3-11 | IPD30N06S223ATMA2EN529 KB11 Apr 201601_00
EN IPD30N06S2-23
EN IPP80P03P4-05
Repetitive Avalanche of Automotive MOSFETs IPP80P03P4-05
EN power-stage-3x3-and-5x6
EN TLE8203E
PSpice-OptimOS IPP77N06S2-12
EN IPD30N06S2-23