IPD70R600CE

ParametricIPD70R600CE
PackageDPAK (TO-252)
VDS  max700.0V
RDS (on)  max600.0mΩ
PolarityN
ID  max10.5A
Ptot  max86.0W
IDpuls  max18.0A
VGS(th)  min  max2.5V  3.5V
QG22.0nC
Rth1.45K/W
RthJC  max1.45K/W
RthJA  max62.0K/W
Operating Temperature  min  max-40.0°C  150.0°C
Pin Count3.0Pins
MountingSMT
Qgd12.0nC
Tj  min  max-40.0°C  150.0°C
Sales Product NameIPD70R600CE
OPNIPD70R600CEAUMA1
Product Statusactive and preferred
Package NamePG-TO252-3
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size2500
Packing TypeTAPE & REEL
Moisture Level3
Summary of Features:
  • Narrow margins between typical and max R DS(on)
  • Reduced energy stored in output capacitance (E oss)
  • Good body diode ruggedness and reduced reverse recovery charge (Q rr)
  • Optimized integrated R g
Benefits:
  • Low conduction losses
  • Low switching losses
  • Suitable for hard and soft switching
  • Easy controllable switching behavior
  • Improved efficiencyand consequent reduction of power consumption
  • Less design in effort
  • Easy to use
Target Applications:
  • Laptop and Notebook Adapter
  • Low Power Charger
  • Lighting
  • LCD and LED TV
Data Sheet
TitleSizeDateVersion
Infineon-IPD70R600CE-DS-v02_00-EN,EN982 KB22 Mar 201602_00
Product Brochure
TitleSizeDateVersion
Product Brochure Industrial Gate Driver ICs OverviewEN613 KB27 Apr 201603_00
CoolMOS™ Benefits in Hard and Soft SwitchingEN1.5 MB09 Jun 201606_16
CoolMOS™ Selection GuideEN2.7 MB30 May 201602_00
Application Notes
TitleSizeDateVersion
Application Note 600V 650V CoolMOS™ CEEN1.1 MB23 Mar 201601_01
Application Note Introduction to Infineons Power MOSFET Simulation ModelsEN701 KB30 Nov 201501_00
Application Note Detailed MOSFET Behavioral AnalysisEN7 MB25 Jun 201501_00
Application Note Recommendations for Assembly of Infineon TO Packages993 KB01 Apr 2008
Application Note CoolMOS™ - Electrical Safety and Isolation in High Voltage Applications - English1 MB01 Nov 2012
Application Note Addendum to 300W general purpose wide-range SMPSEN660 KB23 Nov 201501_00
Application Note CoolMOS™ Primary Side MOSFET Selection for LLC Topology880 KB14 Aug 2014
Product Brief
TitleSizeDateVersion
Product Brief 500V 600V 650V 700V CoolMOS™ CE in SOT-223 Package JapaneseJA712 KB18 Apr 201601_00
Product Brief CoolMOS™ CE for Consumer JapaneseJA433 KB06 Feb 201501_00
Product Brief CoolMOS™ CE for ConsumerENCN343 KB21 Nov 201401_00
Additional Product Information
TitleSizeDateVersion
Advertisement Automatic Openings SystemEN134 KB28 Jan 201601_00
Advertisement SMPSEN229 KB20 Aug 201501_00
High Voltage Power MOSFETs CoolMOS™ PositioningEN252 KB24 Nov 201401_00
CoolMOS™ CE Selection TreeEN103 KB05 Apr 201601_00
Application Brochure
TitleSizeDateVersion
Application Brochure 3D PrinterEN340 KB23 Oct 201501_00
Application Brochure - Infineon Solutions for TransportationEN6.9 MB01 Jun 201300_00
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 Feb 201600_00
Package Data
TitleSizeDateVersion
PG-TO252-3-344 | IPD70R600CEAUMA1EN347 KB11 Apr 201601_00
EN IPD70R600CE
EN 2EDN7524G
EN thinpak-8x8
EN thinpak-8x8
Application Note CoolMOS™ - Electrical Safety and Isolation in High Voltage Applications - English to-220-wide-creepage
EN to-220-wide-creepage
Application Note Recommendations for Assembly of Infineon TO Packages latest-packages
EN to-220-wide-creepage
Application Note CoolMOS™ Primary Side MOSFET Selection for LLC Topology thinpak-8x8
EN IDP30C65D2
EN power-stage-3x3-and-5x6
JA coolmos-family-selection-guide
JA sot-223
CN coolmos-family-selection-guide
EN sot-223
EN non-isolated-gate-driver-ics-and-controllers
EN XMC4800-E196F2048+AA
EN coolmos-family-selection-guide
EN to-220-wide-creepage
EN silicon-power-diode
EN power-stage-3x3-and-5x6
EN IDV20E65D1
EN IPD70R600CE