Parametric | IPD80R2K8CE |
---|
Budgetary Price €/1k | 0.41 |
---|
Package | DPAK (TO-252) |
---|
VDS
max | 800.0V |
---|
RDS (on)
max | 2800.0mΩ |
---|
Polarity | N |
---|
ID
max | 1.9A |
---|
Ptot
max | 42.0W |
---|
IDpuls
max | 6.0A |
---|
VGS(th)
min
max | 2.1V
3.9V |
---|
QG | 12.0nC |
---|
Rth | 3.0K/W |
---|
RthJC
max | 3.0K/W |
---|
RthJA
max | 62.0K/W |
---|
Operating Temperature
min | -55.0°C |
---|
Pin Count | 3.0Pins |
---|
Mounting | SMT |
---|
Sales Product Name | IPD80R2K8CE |
---|
OPN | IPD80R2K8CEATMA1 |
---|
Product Status | active and preferred |
---|
Package Name | PG-TO252-3 |
---|
Completely lead free | no |
---|
Halogen free | yes |
---|
RoHS compliant | yes |
---|
Packing Size | 2500 |
---|
Packing Type | TAPE & REEL |
---|
Moisture Level | 1 |
---|
| |
---|
OPN | IPD80R2K8CEBTMA1 |
---|
Product Status | discontinued |
---|
Package Name | PG-TO252-3 |
---|
Completely lead free | no |
---|
Halogen free | no |
---|
RoHS compliant | yes |
---|
Packing Size | 2500 |
---|
Packing Type | TAPE & REEL |
---|
Moisture Level | 1 |
---|
| Summary of Features:- Low specific on-state resistance (R DS(on)*A)
- Very low energy storage in output capacitance (E oss) @ 400V
- Low gate charge (Q g)
- Field-proven CoolMOS™ quality
- CoolMOS™ technology has been manufactured by Infineon since 1998
Benefits:- High efficiency and power density
- Outstanding price/performance
- High reliability
- Ease of use
Target Applications: |