| Parametric | IPU80R1K4CE |
|---|
| Budgetary Price €/1k | 0.48 |
|---|
| Package | IPAK (TO-251) |
|---|
| VDS
max | 800.0V |
|---|
| RDS (on)
max | 1400.0mΩ |
|---|
| Polarity | N |
|---|
| ID
max | 3.9A |
|---|
| Ptot
max | 63.0W |
|---|
| IDpuls
max | 12.0A |
|---|
| VGS(th)
min
max | 2.1V
3.9V |
|---|
| QG | 23.0nC |
|---|
| Rth | 2.0K/W |
|---|
| RthJC
max | 2.0K/W |
|---|
| RthJA
max | 62.0K/W |
|---|
| Operating Temperature
min | -55.0°C |
|---|
| Pin Count | 3.0Pins |
|---|
| Mounting | THT |
|---|
| Sales Product Name | IPU80R1K4CE |
|---|
| OPN | IPU80R1K4CEAKMA1 |
|---|
| Product Status | active and preferred |
|---|
| Package Name | PG-TO251-3 |
|---|
| Completely lead free | no |
|---|
| Halogen free | yes |
|---|
| RoHS compliant | yes |
|---|
| Packing Size | 1500 |
|---|
| Packing Type | TUBE |
|---|
| Moisture Level | |
|---|
| |
|---|
| OPN | IPU80R1K4CEBKMA1 |
|---|
| Product Status | discontinued |
|---|
| Package Name | PG-TO251-3 |
|---|
| Completely lead free | no |
|---|
| Halogen free | no |
|---|
| RoHS compliant | yes |
|---|
| Packing Size | 1500 |
|---|
| Packing Type | TUBE |
|---|
| Moisture Level | NA |
|---|
| Summary of Features:- Low specific on-state resistance (R DS(on)*A)
- Very low energy storage in output capacitance (E oss) @ 400V
- Low gate charge (Q g)
- Field-proven CoolMOS™ quality
- CoolMOS™ technology has been manufactured by Infineon since 1998
Benefits:- High efficiency and power density
- Outstanding price/performance
- High reliability
- Ease of use
Target Applications: |
