PTFA091201E V4

High Power RF LDMOS FET, 120 W, 28 V, 920 – 960 MHz

ParametricPTFA091201E V4
Flange TypeBolt Down
MatchingI/O
Frequency Band  min  max920.0MHz  960.0MHz
P1dB120.0W
Supply Voltage28.0V
Pout50.0W
Gain19.0dB
Test SignalEDGE
Sales Product NamePTFA091201E V4
OPNPTFA091201EV4R0XTMA1
Product Statusactive and preferred
Package NameH-36248-2
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTAPE & REEL
OPNPTFA091201EV4XWSA1
Product Statusdiscontinued
Package NameH-36248-2
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeBLISTER TRAY
Summary of Features:
  • Broadband internal matching
  • Typical EDGE performance, - Average output power = 50 W - Gain = 19 dB - Efficiency = 44%
  • Typical CW performance - Output power at P1dB = 135 W - Gain = 18 dB - Efficiency = 64%
  • Capable of handling 10:1 VSWR @ 28 V, 120 W (CW) output power
  • Integrated ESD protection. Human Body Model, Class 2 (minimum)
  • Excellent thermal stability, low HCI drift
  • Pb-free and RoHS compliant
  • Package: H-36248-2, bolt-down
Data Sheet
TitleSizeDateVersion
PTFA 091201EF DS,EN268 KB19 Nov 200703_00
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 May 201505_00
Reference Design
TitleSizeDateVersion
PTFA09120EF Gerber Files245 KB12 May 201002_00
Package Data
TitleSizeDateVersion
H-36248-2-1 | PTFA091201EV4XWSA1EN345 KB11 Apr 201601_00
EN PTFA091201F+V4
EN where-to-buy
PTFA09120EF Gerber Files PTFA091201F+V4
EN PTFA091201E+V4