• 简体中文
• English

The radiation hardened HS-4424 family are noninverting, dual, monolithic high-speed MOSFET drivers designed to convert low voltage control input signals into higher voltage, high current outputs. The HS-4424DRH, HS-4424DEH are fully tested across the 8V to 18V operating range.

The inputs of these devices can be directly driven by the HS-1825ARH PWM device or by our ACS/ACTS and HCS/HCTS type logic devices. The fast rise times and high current outputs allow very quick control of high gate capacitance power MOSFETs in high frequency applications.

The high current outputs minimize power losses in MOSFETs by rapidly charging and discharging the gate capacitance. The output stage incorporates a low voltage lockout circuit that puts the outputs into a three-state mode when the supply voltage is below its Undervoltage Lockout (UVLO) threshold voltage.

Constructed with Intersil’s dielectrically isolated Rad Hard Silicon Gate (RSG) BiCMOS process, these devices are immune to single event latch-up and have been specifically designed to provide highly reliable performance in harsh radiation environments.

Key Features

• Electrically screened to DLA SMD# 5962-99560
• QML qualified per MIL-PRF-38535 requirements
• Latch-up immune
• Radiation environment
• High dose rate (50-300rad(Si)/s): 300krad(Si)
  • Low dose rate (0.01rad(Si)/s): 50krad(Si)* *Limit established by characterization
• IPEAK: >2A (minimum)
• Matched rise and fall times (CL = 4300pF): 75ns (maximum)
• Low voltage lockout feature: <8V
• Wide supply voltage range: 8V to 18V
• Propagation delay: 250ns (maximum)
• Consistent delay times with VCC changes
• Low power consumption
  • 40mW with inputs high
  • 20mW with inputs low
• Low equivalent input capacitance: 3.2pF (typical)
• ESD protected: >4kV

Applications

• Switching power supplies
• DC/DC converters
• Motor controllers