DS1220AB:16k Nonvolatile SRAM

The DS1220AB and DS1220AD 16k Nonvolatile (NV) SRAMs are 16,384-bit, fully static, NV SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. The NV SRAMs can be used in place of existing 2k x 8 SRAMs directly conforming to the popular bytewide 24-pin DIP standard. The devices also match the pinout of the 2716 EPROM and the 2816 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

Key Features
  • 10 years minimum data retention in the absence of external power
  • Data is automatically protected during power loss
  • Directly replaces 2k x 8 volatile static RAM or EEPROM
  • Unlimited write cycles
  • Low-power CMOS
  • JEDEC standard 24-pin DIP package
  • Read and write access times of 100ns
  • Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
  • Full ±10% VCC operating range (DS1220AD)
  • Optional ±5% VCC operating range (DS1220AB)
  • Optional industrial temperature range of -40°C to +85°C, designated IND
DS1220AB, DS1220AD: Pin Assignment
DS1220AB, DS1220AD: Pin Assignment
DataSheet
titleDownload file
DS1220AB-DS1220AD Data SheetDS1220AB-DS1220AD.pdf
Parametrics
Part NumberMemory TypeMemory SizeBus TypeVSUPPLY
(V)
VSUPPLY
(V)
Package/PinsBudgetary
Price
minmaxSee Notes
DS1220ABNV SRAM2K x 8Parallel4.755.25EDIP/24$8.17 @1k
DS1220AD4.55.5EDIP/24$8.05 @1k
Ordering Information
Part NumberNotesStatusRecommended ReplacementPackageTempRoHS
DS1220AB-1005% Tolerance, 100nsNo Longer AvailableDS1220AB-100+EDIP,;24 pin;609.6 mm²0°C to +70°CSee data sheet
DS1220AB-100IND5% Tolerance, 100nsNo Longer AvailableDS1220AB-100IND+EDIP,;24 pin;609.6 mm²-40°C to +85°CSee data sheet
DS1220AB-100IND+ActiveDS1220AB-100+EDIP,;24 pin;609.6 mm²-40°C to +85°CSee data sheet
DS1220AB-1205% Tolerance, 120nsNo Longer AvailableDS1220AB-100+EDIP,;24 pin;609.6 mm²0°C to +70°CSee data sheet
DS1220AB-120+ActiveDS1220AB-100+EDIP,;24 pin;609.6 mm²0°C to +70°CSee data sheet
DS1220AB-1505% Tolerance, 150nsNo Longer AvailableDS1220AB-100+EDIP,;24 pin;609.6 mm²0°C to +70°CSee data sheet
DS1220AB-150+ActiveDS1220AB-100+EDIP,;24 pin;609.6 mm²0°C to +70°CSee data sheet
DS1220AB-150INDNo Longer AvailableDS1220AB-100IND+EDIP,;24 pin;609.6 mm²-40°C to +85°CSee data sheet
DS1220AB-150IND+ActiveDS1220AB-100IND+EDIP,;24 pin;609.6 mm²-40°C to +85°CSee data sheet
DS1220AB-2005% Tolerance, 200nsNo Longer AvailableDS1220AB-100+EDIP,;24 pin;609.6 mm²0°C to +70°CSee data sheet
Part NumberNotesStatusRecommended ReplacementPackageTempRoHS
DS1220AB-200+ActiveDS1220AB-100IND+EDIP,;24 pin;609.6 mm²0°C to +70°CSee data sheet
DS1220AB-200IND5% Tolerance, 200nsNo Longer AvailableDS1220AB-100IND+EDIP,;24 pin;609.6 mm²-40°C to +85°CSee data sheet
DS1220AB-200IND+ActiveDS1220AB-100IND+EDIP,;24 pin;609.6 mm²-40°C to +85°CSee data sheet
DS1220AB-DS1220AD.pdf DS1220AD
How to Replace a DS1213 SmartSocket with an Equivalent-Density NV SRAM Module DS1250AB
Low-Temperature Data Retention in Nonvolatile SRAM DS1270Y
NV SRAM Device Programmers DS1250Y
Timing Considerations When Using NVSRAM DS1350Y
Tech. Brief 39: NV SRAM Cross Reference Table DS1270Y
NV SRAM Frequently Asked Questions DS1350Y
DS1220AB-DS1220AD.pdf DS1220AB