A2I25D012N: 2100-2900 MHz, 2.2 W Avg., 28 V Airfast® RF LDMOS Wideband Integrated Amplifiers

TO-270WB-15 and TO-270WBG-15 Package Image
特性
  • On-Chip Matching (50 Ohm Input, DC Blocked)
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Doherty Applications
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13-inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
A2I25D012NR1, A2I25D012GNR1 2300-2690 MHz, 2.2 W Avg., 28 V Airfast® RF LDMOS Wideband Integrated Power... (REV 1) PDF (581.6 kB) A2I25D012N20 Mar 2015
Application Notes (3)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 (REV 1) PDF (111.6 kB) AN198712 May 2004
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 (REV 0) PDF (112.8 kB) AN197709 Oct 2003
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
White Papers (1)
Name/DescriptionModified Date
Advances in Airfast® RFICs White Paper (REV 0) PDF (149.2 kB) AIRFASTWBFWP15 May 2015
Package Information (2)
Name/DescriptionModified Date
98ASA00684D, TO-WB, 17.53x9.02x2.59, Pitch 1.02, 16 Pins (REV A) PDF (84.9 kB) 98ASA00684D11 Mar 2016
98ASA00630D, TO-WB, 17.53x9.02x2.59, Pitch 3.05, 16 Pins (REV A) PDF (80.2 kB) 98ASA00630D15 Feb 2016
Supporting Information (1)
Name/DescriptionModified Date
Second-Generation Airfast® RF Power Solutions (REV 0) PDF (640.8 kB) AIRFAST_2GEN_TRN_SI23 May 2014
Ordering Information
ProductStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
A2I25D012NR1Active210029002841.915.52.2 @ AVGW-CDMA33.2 @ 269019.83.3InputABLDMOS
A2I25D012GNR1Active210029002841.915.52.2 @ AVGW-CDMA33.2 @ 269019.83.3InputABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
TO-270WB-1598ASA00630DMPQ - 500 REELPOQ - 500 BOXActiveA2I25D012NR1A2I25D012NR1.pdf3260
TO-270WB-15G98ASA00684DMPQ - 500 REELPOQ - 500 BOXActiveA2I25D012GNR1A2I25D012GNR1.pdf3260
A2I25D012NR1, A2I25D012GNR1 2300-2690 MHz, 2.2 W Avg., 28 V Airfast® RF LDMOS Wideband Integrated Power... A2I25D012N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 MMRF2010N
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 MMRF2010N
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
Advances in Airfast® RFICs White Paper MW7IC2725N
Second-Generation Airfast® RF Power Solutions A2T26H160-24S
98ASA00630D, TO-WB, 17.53x9.02x2.59, Pitch 3.05, 16 Pins A2I25D012N
A2I25D012NR1.pdf A2I25D012N
98ASA00684D, TO-WB, 17.53x9.02x2.59, Pitch 1.02, 16 Pins A2I25D012N
A2I25D012GNR1.pdf A2I25D012N