A2T07D160W04S: 716-960 MHz, 30 W Avg., 28 V Airfast® RF Power LDMOS Transistor

NI-780S-4 Image
特性
  • Designed for Wide Instantaneous Bandwidth Applications
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13-inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
A2T07D160W04SR3 716-960 MHz, 30 W Avg., 28 V Airfast® RF Power LDMOS Transistor - Data Sheet (REV 0) PDF (869.2 kB) A2T07D160W04S13 Aug 2014
Application Notes (1)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (1)
Name/DescriptionModified Date
98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins (REV C) PDF (42.9 kB) 98ASA10718D15 Aug 2016
Supporting Information (1)
Name/DescriptionModified Date
Second-Generation Airfast® RF Power Solutions (REV 0) PDF (640.8 kB) AIRFAST_2GEN_TRN_SI23 May 2014
Printed Circuit Boards
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
A2T07D160W04SR3Active71696028497930 @ AVGW-CDMA21.5 @ 80348.50.63I/OAB, CLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupPPT (°C)
NI-780HS-498ASA10718DMPQ - 250 REELPOQ - 250 REELActiveA2T07D160W04SR3A2T07D160W04SR3.pdf260
A2T07D160W04SR3 716-960 MHz, 30 W Avg., 28 V Airfast® RF Power LDMOS Transistor - Data Sheet A2T07D160W04S
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
Second-Generation Airfast® RF Power Solutions A2T26H160-24S
A2T07D160W04S 758-803 MHz PCB DXF file A2T07D160W04S
A2T07D160W04S 865-895 MHz PCB DXF file A2T07D160W04S
98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins MMRF1310H
A2T07D160W04SR3.pdf A2T07D160W04S