A2T09D400-23N: 716-960 MHz, 93 W Avg., 28 V Airfast® RF Power LDMOS Transistor
OM-1230-4L2S Package Image
特性
- Production Tested in a Symmetrical Doherty Configuration
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Designed for Digital Predistortion Error Correction Systems
- RoHS Compliant
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| A2T09D400-23N 716-960 MHz, 93 W Avg, 28 V Data Sheet (REV 0) PDF (448.3 kB) A2T09D400-23N | 11 Mar 2016 |
Application Notes (1)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (1)
| Name/Description | Modified Date |
|---|---|
| 98ASA00885D, OMNI, 32.26x9.96x3.81, Pitch 13.72, 7 Pins (REV A) PDF (90.3 kB) 98ASA00885D | 14 Mar 2016 |
Ordering Information
| Product | Status | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| A2T09D400-23NR6 | Active | 716 | 960 | 28 | 56 | 400 | 93 @ AVG | W-CDMA | 17.9 @ 836 | 48 | 0.29 | I/O | AB, C | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | MSL | PPT (°C) |
|---|---|---|---|---|---|---|---|---|
| OM-1230-4L2S | 98ASA00885D | MPQ - 150 REELPOQ - 150 BOX | Active | A2T09D400-23NR6 | A2T09D400-23NR6.pdf |   | 3 | 260 |
- A2T09D400-23N 716-960 MHz, 93 W Avg, 28 V Data Sheet A2T09D400-23N
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Products Selector Guide MMT20303H
- 98ASA00885D, OMNI, 32.26x9.96x3.81, Pitch 13.72, 7 Pins A2T21H360-23N
- A2T09D400-23NR6.pdf A2T09D400-23N
