A2T09VD250N: 716-960 MHz, 65 W Avg, 48 V Airfast® RF Power LDMOS Transistor
TO-270WB-6A Package Image
特性
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Designed for Digital Predistortion Error Correction Systems
- Optimized for Doherty Applications
- RoHS Compliant
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| A2T09VD250N 716-960 MHz, 65 W Avg, 48 V Data Sheet (REV 0) PDF (641.2 kB) A2T09VD250N | 27 Aug 2015 |
Application Notes (1)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (1)
| Name/Description | Modified Date |
|---|---|
| 98ASA00592D, TO-WB, 17.53x9.02x2.59, Pitch 3.05, 7 Pins (REV A) PDF (89.9 kB) 98ASA00592D | 22 Jan 2016 |
Ordering Information
| Product | Status | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| A2T09VD250NR1 | Active | 716 | 960 | 48 | 53.8 | 240 | 65 @ AVG | W-CDMA | 22.5 @ 920 | 34.8 | 0.56 | Input | AB | LDMOS |
