A2T18S260W12N: 1805-1880 MHz, 56 W Avg., 28 V Airfast® RF Power LDMOS Transistor

OM-880X-2L2L Package Image
特性
  • Designed for Wide Instantaneous Bandwidth Applications
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions
  • Optimized for Doherty Applications
  • RoHS compliant
Data Sheets (1)
Name/DescriptionModified Date
A2T18S260W12N 1805-1880 MHz, 56 W Avg, 28 V Data Sheet (REV 0) PDF (323.9 kB) A2T18S260W12N12 Feb 2016
Application Notes (2)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN190713 May 2009
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (1)
Name/DescriptionModified Date
98ASA00549D, OMNI, 23.11x9.96x3.81, Pitch 13.41, 5 Pins (REV A) PDF (81.6 kB) 98ASA00549D15 Feb 2016
Printed Circuit Boards
Ordering Information
ProductStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
A2T18S260W12NR3Active180518802854.528056 @ AVGW-CDMA18.7 @ 188034.40.23I/OABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
OM-880X-2L2L98ASA00549DMPQ - 250 REELPOQ - 250 BOXActiveA2T18S260W12NR3A2T18S260W12NR3.pdf3260
A2T18S260W12N 1805-1880 MHz, 56 W Avg, 28 V Data Sheet A2T18S260W12N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
A2T18S260W12N 1800 MHz PCB DXF file A2T18S260W12N
98ASA00549D, OMNI, 23.11x9.96x3.81, Pitch 13.41, 5 Pins A2T18S260W12N
A2T18S260W12NR3.pdf A2T18S260W12N