A2T21H450W19S: 2110-2200 MHz, 89 W Avg., 30 V Airfast® RF Power LDMOS Transistor

NI-1230S-4S4S Package Image
特性
  • Advanced High Performance In-Package Doherty
  • Designed for Wide Instantaneous Bandwidth Applications
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
Data Sheets (1)
Name/DescriptionModified Date
A2T21H450W19S 2110-2220 MHz, 89 W Avg, 30 V Data Sheet (REV 0) PDF (420.8 kB) A2T21H450W19S21 Sep 2016
Application Notes (2)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages (REV 1) PDF (664.6 kB) AN190824 Feb 2011
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Ordering Information
ProductStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
A2T21H450W19SR6Active211022003055.939089 @ AVGW-CDMA15.7 @ 211046.10.26I/OAB, CLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupPPT (°C)
NI-1230S-4S4S98ASA00155DMPQ - 150 REELPOQ - 150 REELActiveA2T21H450W19SR6A2T21H450W19SR6.pdf260
A2T21H450W19S 2110-2220 MHz, 89 W Avg, 30 V Data Sheet A2T21H450W19S
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages MMRF1317H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
98ASA00155D, NI-C, 32.26x10.16x4.45, Pitch 13.72, 9 Pins mrf8s18260h
A2T21H450W19SR6.pdf A2T21H450W19S