A2T21H450W19S: 2110-2200 MHz, 89 W Avg., 30 V Airfast® RF Power LDMOS Transistor
NI-1230S-4S4S Package Image
特性
- Advanced High Performance In-Package Doherty
- Designed for Wide Instantaneous Bandwidth Applications
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions
- Designed for Digital Predistortion Error Correction Systems
- RoHS Compliant
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| A2T21H450W19S 2110-2220 MHz, 89 W Avg, 30 V Data Sheet (REV 0) PDF (420.8 kB) A2T21H450W19S | 21 Sep 2016 |
Application Notes (2)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
| AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages (REV 1) PDF (664.6 kB) AN1908 | 24 Feb 2011 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Ordering Information
| Product | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| A2T21H450W19SR6 | Active | 2110 | 2200 | 30 | 55.9 | 390 | 89 @ AVG | W-CDMA | 15.7 @ 2110 | 46.1 | 0.26 | I/O | AB, C | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | PPT (°C) |
|---|---|---|---|---|---|---|---|
| NI-1230S-4S4S | 98ASA00155D | MPQ - 150 REELPOQ - 150 REEL | Active | A2T21H450W19SR6 | A2T21H450W19SR6.pdf |   | 260 |
- A2T21H450W19S 2110-2220 MHz, 89 W Avg, 30 V Data Sheet A2T21H450W19S
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages MMRF1317H
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Products Selector Guide MMT20303H
- 98ASA00155D, NI-C, 32.26x10.16x4.45, Pitch 13.72, 9 Pins mrf8s18260h
- A2T21H450W19SR6.pdf A2T21H450W19S
