A3T21H450W23S: 2110-2200 MHz, 89 W Avg., 31 V Airfast® RF Power LDMOS Transistor

For additional information and sample availability contact your local NXP Sales Office or NXP Authorized Distributor.

ACP-1230S-4L2S Package Image
特性
  • Advanced high performance in-package Doherty
  • Designed for wide instantaneous bandwidth applications
  • Greater negative gate-source voltage range for improved Class C operation
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • Designed for digital predistortion error correction systems
  • RoHS compliant
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Supporting Information (1)
Name/DescriptionModified Date
RF Airfast Third-Generation Products and Solutions (REV 0) PDF (829.9 kB) AIRFAST_THIRD_GENERATION_TRN_SI30 Sep 2016
Ordering Information
ProductStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
PA3T21H450W23SIntroduction Pending211022003189 @ AVGW-CDMA15.5 @ 215549.5I/OAB, CLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupPPT (°C)
ACP-1230S-4L2SMPQ - 250 REELPOQ - 250 REELIntroduction PendingPA3T21H450W23SContact UsContact Us260
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Airfast Third-Generation Products and Solutions A3T21H450W23S