AFT09H310-03S: 920-960 MHz, 56 W Avg., 28 V Airfast® RF Power LDMOS Transistors

NI-1230S-4S, NI-1230GS-4L Package Images
特性
  • Advanced High Performance In-Package Doherty
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
  • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13-inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
AFT09H310-03SR6, AFT09H310-04GSR6 920-960 MHz, 56 W Avg., 28 V RF Power LDMOS Transistors - Data Sheet (REV 1) PDF (340.4 kB) AFT09H310-03S18 Sep 2013
Application Notes (1)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (2)
Name/DescriptionModified Date
98ASA00459D, NI-C, 32.26x10.16x4.24, Pitch 13.72, 5 Pins (REV B) PDF (48.5 kB) 98ASA00459D29 Feb 2016
98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins (REV H) PDF (44.6 kB) 98ARB18247C23 Feb 2016
Printed Circuit Boards
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
AFT09H310-04GSR6Active9209602852.618056 @ AVGW-CDMA17.9 @ 92047.40.41I/OAB, CLDMOS
AFT09H310-03SR6Active9209602852.618056 @ AVGW-CDMA17.9 @ 92047.40.41I/OAB, CLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupPPT (°C)
NI-1230-4S GULL98ASA00459DMPQ - 150 REELPOQ - 150 REELActiveAFT09H310-04GSR6AFT09H310-04GSR6.pdf260
NI-1230S98ARB18247CMPQ - 150 REELPOQ - 150 REELActiveAFT09H310-03SR6AFT09H310-03SR6.pdf260
AFT09H310-03SR6, AFT09H310-04GSR6 920-960 MHz, 56 W Avg., 28 V RF Power LDMOS Transistors - Data Sheet AFT09H310-03S
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
AFT09H310-03S 920-960 MHz PCB DXF file AFT09H310-03S
98ASA00459D, NI-C, 32.26x10.16x4.24, Pitch 13.72, 5 Pins mrfe6vp61k25h
AFT09H310-04GSR6.pdf AFT09H310-03S
98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
AFT09H310-03SR6.pdf AFT09H310-03S