AFT09S220-02N: 850-960 MHz, 54 W Avg, 28 V Airfast® RF Power LDMOS Transistor

OM-780-2L Package Image
特性
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Doherty Applications
  • RoHS Compliant
Data Sheets (1)
Name/DescriptionModified Date
AFT09S220-02N 850-960 MHz, 54 W Avg, 28 V Data Sheet (REV 0) PDF (487.0 kB) AFT09S220-02N18 Sep 2015
Application Notes (3)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN190713 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN378912 Mar 2009
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (1)
Name/DescriptionModified Date
98ASA10831D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 2 Pins (REV C) PDF (68.6 kB) 98ASA10831D22 Mar 2016
Printed Circuit Boards
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
AFT09S220-02NR3Active8509602853.422054 @ AVGW-CDMA19.5 @ 92035.80.3I/OABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
OM780-2 Straight Cu98ASA10831DMPQ - 250 REELPOQ - 250 REELActiveAFT09S220-02NR3AFT09S220-02NR3.pdf3260
AFT09S220-02N 850-960 MHz, 54 W Avg, 28 V Data Sheet AFT09S220-02N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
AFT09S220-02N PCB DXF file AFT09S220-02N
98ASA10831D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 2 Pins MMRF1017N
AFT09S220-02NR3.pdf AFT09S220-02N