AFT18H357-24N: 1805-1880 MHz, 63 W Avg., 28 V Airfast® RF Power LDMOS Transistor
OM-1230-4L2L Package Image
特性
- Advanced high performance in-package Doherty
- High thermal conductivity packaging technology for reduced thermal resistance
- Greater negative gate-source voltage range for improved Class C operation
- Designed for digital predistortion error correction systems
- RoHS compliant
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| AFT18H357-24N 1805–1880 MHz, 63 W AVG., 28 V Airfast® RF Power LDMOS Transistor Data Sheet (REV 0) PDF (533.2 kB) AFT18H357-24N | 12 May 2015 |
Application Notes (2)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
| AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 | 13 May 2009 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (1)
| Name/Description | Modified Date |
|---|---|
| 98ASA00787D, OMNI, 32.3x10.0x3.81, Pitch 13.72, 7 Pins (REV O) PDF (91.2 kB) 98ASA00787D | 05 Dec 2014 |
Printed Circuit Boards
- AFT18H357-24N PCB DXF file (REV 1) ZIP AFT18H357_24N_PCB 5/12/2015
Ordering Information
| Product | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AFT18H357-24NR6 | Active | 1805 | 1880 | 28 | 53 | 200 | 63 @ AVG | W-CDMA | 17.5 @ 1805 | 48.7 | 0.23 | I/O | AB, C | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | MSL | PPT (°C) |
|---|---|---|---|---|---|---|---|---|
| OM-1230-4L2L | 98ASA00787D | MPQ - 150 REELPOQ - 150 BOX | Active | AFT18H357-24NR6 | AFT18H357-24NR6.pdf |   | 3 | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Products Selector Guide MMT20303H
- AFT18H357-24N PCB DXF file AFT18H357-24N
- 98ASA00787D, OMNI, 32.3x10.0x3.81, Pitch 13.72, 7 Pins AFT18H357-24N
- AFT18H357-24NR6.pdf AFT18H357-24N
