AFT18P350-4S2L: 1805-1880 MHz, 63 W Avg., 28 V Airfast® RF Power LDMOS Transistor
NI-1230-4LS2L Package Image
特性
- Production Tested in a Symmetrical Doherty Configuration
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Designed for Digital Predistortion Error Correction Systems
- RoHS Compliant
- In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13-inch Reel.
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| AFT18P350-4S2LR6 1805-1880 MHz, 63 W Avg., 28 V Airfast® RF Power LDMOS Transistors - Data Sheet (REV 0) PDF (505.9 kB) AFT18P350-4S2L | 24 Apr 2013 |
Application Notes (1)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (1)
| Name/Description | Modified Date |
|---|---|
| 98ASA00513D, NI-1230-4LS2L (REV A) PDF (44.6 kB) 98ASA00513D | 10 Mar 2013 |
Ordering Information
| Product | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AFT18P350-4S2LR6 | Active | 1805 | 1880 | 28 | 55 | 316 | 63 @ AVG | W-CDMA | 16.1 @ 1805 | 44.5 | 0.39 | I/O | AB, C | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | PPT (°C) |
|---|---|---|---|---|---|---|---|
| NI-1230-4L2L | 98ASA00513D | MPQ - 150 REELPOQ - 150 REEL | Active | AFT18P350-4S2LR6 | AFT18P350-4S2LR6.pdf |   | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Products Selector Guide MMT20303H
- 98ASA00513D, NI-1230-4LS2L MMRF1024HS
- AFT18P350-4S2LR6.pdf AFT18P350-4S2L
