AFT18S230-12N: 1805-1880 MHz, 50 W Avg., 28 V Airfast® RF Power LDMOS Transistor
OM-780-2L2L Package Image
特性
- High thermal conductivity packaging technology for reduced thermal resistance
- Greater negative gate-source voltage range for improved Class C operation
- Designed for digital predistortion error correction systems
- Optimized for Doherty applications
- RoHS compliant
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| AFT18S230-12N 1805-1880 MHz, 50 W Avg, 28 V RF Power LDMOS Transistor Data Sheet (REV 0) PDF (546.0 kB) AFT18S230-12N | 27 Jul 2015 |
Application Notes (3)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
| AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 | 13 May 2009 |
| Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 | 12 Mar 2009 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (1)
| Name/Description | Modified Date |
|---|---|
| 98ASA00574D, OMNI, 20.57x9.96x3.81, Pitch 12.14, 5 Pins (REV A) PDF (83.6 kB) 98ASA00574D | 15 Feb 2016 |
Ordering Information
| Product | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AFT18S230-12NR3 | Active | 1805 | 1880 | 28 | 53.1 | 204 | 50 @ AVG | W-CDMA | 17.6 @ 1880 | 33.8 | 0.27 | I/O | AB | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | MSL | PPT (°C) |
|---|---|---|---|---|---|---|---|---|
| OM-780-2L2L | 98ASA00574D | MPQ - 250 REELPOQ - 250 BOX | Active | AFT18S230-12NR3 | AFT18S230-12NR3.pdf |   | 3 | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
- Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Products Selector Guide MMT20303H
- 98ASA00574D, OMNI, 20.57x9.96x3.81, Pitch 12.14, 5 Pins AFT18S230-12N
- AFT18S230-12NR3.pdf AFT18S230-12N
