AFT20P140-4WN: 1880-2025 MHz, 24 W Avg., 28 V Airfast® RF Power LDMOS Transistors

OM-780-4L, OM-780G-4L Package Image
特性
  • Designed for Wide Instantaneous Bandwidth Applications
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13-inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
AFT20P140-4WN 1880-2025 MHz, 24 W Avg, 28 V Data Sheet (REV 2) PDF (559.0 kB) AFT20P140-4WN26 Oct 2016
Application Notes (2)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN190713 May 2009
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (2)
Name/DescriptionModified Date
98ASA10833D, OMNI, 20.57x9.78x3.81, Pitch 8.89, 5 Pins (REV B) PDF (69.8 kB) 98ASA10833D22 Mar 2016
98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins (REV E) PDF (76.8 kB) 98ASA10834D22 Mar 2016
Printed Circuit Boards
Ordering Information
ProductStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
AFT20P140-4WNR3Active188020252851.113024 @ AVGW-CDMA17.6 @ 202541.20.6I/OAB, CLDMOS
AFT20P140-4WGNR3Active188020252851.113024 @ AVGW-CDMA17.6 @ 202541.20.6I/OAB, CLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
OM780-4 straight Cu98ASA10833DMPQ - 250 REELPOQ - 250 REELActiveAFT20P140-4WNR3AFT20P140-4WNR3.pdf3260
OM780-4 Gull Cu98ASA10834DMPQ - 250 REELPOQ - 250 REELActiveAFT20P140-4WGNR3AFT20P140-4WGNR3.pdf3260
AFT20P140-4WN 1880-2025 MHz, 24 W Avg, 28 V Data Sheet AFT20P140-4WN
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
AFT20P140-4WN PCB DXF file AFT20P140-4WN
98ASA10833D, OMNI, 20.57x9.78x3.81, Pitch 8.89, 5 Pins MMRF1020-04N
AFT20P140-4WNR3.pdf AFT20P140-4WN
98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins MMRF1020-04N
AFT20P140-4WGNR3.pdf AFT20P140-4WN