AFT21S220W02S: 2110-2170 MHz, 50 W Avg., 28 V Airfast® RF Power LDMOS Transistors

NI-780S-2L, NI-780GS-2L Package Image
特性
  • Designed for Wide Instantaneous Bandwidth Applications
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions
  • Optimized for Doherty Applications
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13-inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
AFT21S220W02SR3, AFT21S220W02GSR3 2110-2170 MHz, 50 W Avg., 28 V Airfast® RF Power LDMOS Transistors -... (REV 0) PDF (494.6 kB) AFT21S220W02S24 Feb 2014
Application Notes (1)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (2)
Name/DescriptionModified Date
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins (REV J) PDF (43.5 kB) 98ASB16718C22 Mar 2016
98ASA00193D, NI-C, 20.57x9.78x3.81, Pitch 14.1, 3 Pins (REV C) PDF (46.9 kB) 98ASA00193D26 Feb 2016
Printed Circuit Boards
Ordering Information
ProductStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
AFT21S220W02SR3Active211021702853.220950 @ AVGW-CDMA19.1 @ 214029.30.56I/OABLDMOS
AFT21S220W02GSR3Active211021702853.220950 @ AVGW-CDMA19.1 @ 214029.30.56I/OABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupPPT (°C)
NI-780S98ASB16718CMPQ - 250 REELPOQ - 250 REELActiveAFT21S220W02SR3AFT21S220W02SR3.pdf260
NI-780GS-2L98ASA00193DMPQ - 250 REELPOQ - 250 REELActiveAFT21S220W02GSR3AFT21S220W02GSR3.pdf260
AFT21S220W02SR3, AFT21S220W02GSR3 2110-2170 MHz, 50 W Avg., 28 V Airfast® RF Power LDMOS Transistors -... AFT21S220W02S
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
AFT21S220W02S PCB DXF file AFT21S220W02S
98ASA00193D, NI-C, 20.57x9.78x3.81, Pitch 14.1, 3 Pins mrf6v12500h
AFT21S220W02GSR3.pdf AFT21S220W02S
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins MMRF1011H
AFT21S220W02SR3.pdf AFT21S220W02S